Field emission device and method for the conditioning thereof
US6573642B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30426
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission device (100) includes an electron emitter structure (105) having a deuteride layer (108), which defines a surface (109) of electron emitter structure (105). Deuteride layer (108) is disposed upon an electron emitter (106), which is made from a metal. Deuteride layer (108) is a deuteride of the metal from which electron emitter (106) is made.A method for conditioning field emission device (100) includes the step of providing a contaminated cathode structure (137), which has a contaminated emitter structure (138). The method further includes the step of causing deuterium to react with a metal oxide layer (140) of emitter structure (138), so that the deuterium replaces the oxygen of metal oxide layer (140).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.