S-parameter microscopy for semiconductor devices
US6573744B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jun 8, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/316
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of using bias-dependent S-parameter measurements as a form of microscopy. The microscopy can be used to resolve the details of the internal charge and electric field structure of a semiconductor device. Like other forms of microscopy, the S-parameter microscopy focuses on pseudo “images” and provides a contrast in the “images”. Essentially, the images are gathered in raw form as S-parameter measurements and extracted as small signal models. The models are used to form charge control maps, through a selective method analogous to focusing. Focusing is provided by an algorithm for the unique determination of small signal parameters with contrasts provided by utilizing measured bias dependent activity to discriminate boundaries between the electrical charge and fields. As such, the system is able to accurately forecast semiconductor performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.