Electrostatic discharge protection device for an integrated transistor
US6573778B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00315
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A protection device includes a switching transistor (M11), connected between the gate of the output transistor (TS1) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M11), which are capable of ensuring that the switching transistor (M11) is off when there is no electrostatic discharge at the drain of the output transistor (TS1) and capable of turning the switching transistor (M11) on when there is an electrostatic discharge at the drain of the output transistor (TS1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.