Hybrid circuit having nanotube electromechanical memory
US6574130B2 · kind B2 · utility
201Cited by
207References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.