Composition for resist underlayer film and method for producing the same
US6576393B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Apr 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising:both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1):R1aSi(OR2)4−a  (1)wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2):R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (2)wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and(B) a compound generatin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.