Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
US6576546B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer (112 of FIG. 7d) having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug (704 of FIG. 7d) having a top surface substantially coplanar with the top surface of the dielectric layer; subjecting the top surface of the dielectric layer and the top surface of the conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH4, and any combination thereof, the gas being incorporated into a high-temperature ambient or a plasma; and forming the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the step of subjecting the top surface of the dielectric layer and the top surface of the conductive plug to the gas incorporated into the high-temperature ambient or the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.