Apparatus and method for forming thin film at low temperature and high deposition rate
US6576566B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 30, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.