Patent · US Expired

Multicrystalline silicon having a low proportion of active grain borders

US6576831B2 · kind B2 · utility

6Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 14, 2001
Grant dateJun 10, 2003
Priority date
Expiry dateNov 14, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S136/29
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.