Multicrystalline silicon having a low proportion of active grain borders
US6576831B2 · kind B2 · utility
6Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Nov 14, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.