Semiconductor device having a solid state image sensing device and manufacturing method thereof
US6576940B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
In a semiconductor device having a solid state image sensing device of the present invention, a p-type well region 2a in which a plurality of unit cells, each having a photodiode PD, are formed and a p-type well region 2b in which a peripheral circuit element is formed are installed in a separated manner. Thus, it is possible to prevent a hot carrier, transition metals, etc. within the peripheral circuit region from invading the pixel region more effectively. Consequently, it becomes possible to provide a semiconductor device having a solid state image sensing device and a manufacturing method thereof, which can improve the pixel characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.