Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structure
US6576943B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Feb 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A very thin semiconductor film is used for channels of semiconductor memory elements such that leak currents are reduced by the quantum-mechanical containment effect in the direction of film thickness. The amount of electrical charge accumulated in each charge accumulating region is used to change the conductance between a source region and a drain region of each read transistor structure. This conductance change is utilized for data storage. The thickness of the channel of the write transistor structure is preferably no more than 5 nm. According to one embodiment, the channel of the write transistor is formed by a semiconductor film deposited on a surface intersecting a principal plane of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.