Schottky diode on a silicon carbide substrate

US6576973B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Emmanuel Collard · Tours, FR
• André Lhorte · Saint-Avertin, FR

Key dates

• Filing date: Dec 22, 2000
• Grant date: Jun 10, 2003
• Expiry date: Dec 22, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide layer. A trench crosses the P-type epitaxial layer and penetrates into at least a portion of the height of the N-type epitaxial layer beyond the periphery of the active area. The doping level of the P-type epitaxial layer is chosen so that, for the maximum voltage that the diode is likely to be subjected to, the equipotential surfaces corresponding to approximately ¼ to ¾ of the maximum voltage extend up to the trench.