Low-profile semiconductor device
US6577014B2 · kind B2 · utility
8Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of forming a first conductive bump on a substrate, forming a second conductive bump on a semiconductor chip, forming a plurality of spaced apart dielectric supporting pads on one of the substrate and the semiconductor chip, mounting the semiconductor chip on the substrate to confine therebetween a gap, bonding together the first and second conductive bumps, and forming an insulating layer that fills in the gap and that encapsulates the supporting pads and the first and second conductive bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.