Process for manufacturing mirror devices using semiconductor technology
US6577427B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/904
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a mirror array from multilayered substrate structures. The method forms a release layer overlying a material layer, which is formed on an insulating layer of multilayered substrate. The insulating layer is sandwiched between the material layer and a handle layer. As merely an example, the material layer is a silicon layer defined over a silicon dioxide layer on a silicon on insulator structure, commonly known as SOI. The method forms an opening in the release layer to expose a portion of the material layer. The method forms a torsion bar layer overlying the release layer and in the opening to connect to the material layer; and removes the release layer to hang the material layer from the torsion bar layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.