Cascoded NPN electrostatic discharge protection circuit
US6577481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The electrostatic discharge protection circuit includes: at least two bipolar transistors Q1-Qn coupled in series; a top one Qn of the at least two bipolar transistors coupled to a protected node 10; a bottom one Q1 of the at least two bipolar transistors coupled to a common node 12; at least two resistors R1-Rn coupled in series; each of the at least two resistors is coupled to a corresponding base of one of the at least two bipolar transistors; and a bottom one R1 of the at least two resistors coupled between a base of the bottom one Q1 of the at least two bipolar transistors and the common node 12.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.