Semiconductor laser diode
US6577659B1 · kind B1 · utility
1Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 17, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Mar 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD<MBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.