Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof
US6577662B1 · kind B1 · utility
4Cited by
1References
12Claims
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Key dates
| Filing date | Apr 19, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Apr 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser having a ridge-shaped stripe and made of nitride III-V compound semiconductors, opposite sides of the ridge are buried with a buried semiconductor layer of AlxGa1-xAs (0<×≦1), (AlxGa1-x)yIn1-yP (0≦×≦1, 0≦y≦1) or ZnxMg1-xSySe1-y (0≦×≦1, 0≦y≦1) to stably control transverse modes, thereby minimizing higher mode oscillation during a high power output, and improving the heat dissipation property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.