Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the same
US6579068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2001 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Aug 7, 2021 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF04B43/14
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
A suspended p-GaN membrane is formed using photochemical etching which membrane can then be used in a variety of MEMS devices. In the illustrated embodiment a pump is comprised of the p-GaN membrane suspended between two opposing, parallel n-GaN support pillars, which are anchored to a rigid substrate below the pillars. The p-GaN membrane bows upward between the pillars in order to relieve stress built up during the epitaxial growth of membrane. This bowing substantially increases the volume of the enclosed micro-channel defined between membrane and substrate below. The ends of membrane are finished off by a gradual transition to the flat underlying n-GaN layer in which fluidic channels may also be defined to provide inlet and outlet channels to microchannel. A traveling wave or sequential voltage applied to the electrodes causes the membrane to deform and provide a peristaltic pumping action in the microchannel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.