Method of crystal growth and resulted structures
US6579359B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Jun 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.