Composite material member for semiconductor device and insulated and non-insulated semiconductor devices using composite material member
US6579623B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.