Material for forming a fine pattern and method for manufacturing a semiconductor device using the same
US6579657B1 · kind B1 · utility
90Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1998 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.