Monolithically integrated sensing device and method of manufacture
US6579741B2 · kind B2 · utility
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32References
20Claims
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Key dates
| Filing date | Sep 13, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Sep 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.