Fabrication method and fabrication apparatus for thin film transistor
US6579749B2 · kind B2 · utility
2Cited by
9References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a fabrication of a thin film transistor, an amorphous silicon film 4 is formed on a substrate 1 and, then, phosphor 6 is deposited or diffused on or into a surface of the amorphous silicon film 4 by exposing the amorphous silicon film to phosphine plasma 5. Thereafter, a metal film 7 for source and drain electrodes is formed by sputtering. Phosphor 6 diffuses to a surface layer of the amorphous silicon film 4 during this sputtering and an n-type amorphous silicon film 8 as an ohmic contact layer is formed automatically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.