Transistor device and fabrication method thereof

US6579773B2 · kind B2 · utility

Assignee

• Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

• Hans Norstrom · Solna, SE
• Torkel Arnborg · Stockholm, SE
• Ted Johansson · Djursholm, SE

Key dates

• Filing date: Jun 25, 2001
• Grant date: Jun 17, 2003
• Expiry date: Jun 25, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the high-frequency characteristics of the device is described. The method includes providing a semiconductor substrate (1) with an n-doped collector layer (5) surrounded by isolation areas (4), implanting antimony ions into the collector layer such that a thin highly n-doped layer (18) is formed in the uppermost portion of the collector layer, and forming a base on top of said thin highly n-doped layer (18).