Process for converting a metal carbide to carbon by etching in halogens
US6579833B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2000 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | May 9, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3834
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl2, and about 0% to 99.9% H2 (hydrogen gas) at temperatures from about 100° C. to about 4,000° C., preferably about 800° C. to about 1,200° C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.