Structure of a thin film transistor (TFT) array
US6580093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A structure of the TFT array includes an additional row of pixel electrode coupled to the last scanning line for the last pixel electrode row. The last pixel electrode row has overlap with the last scanning line to form the equivalent storage capacitor. In addition, the liquid crystal exists on a portion of the pixel electrode row without overlapping with the last scanning line, resulting in the liquid crystal capacitor, which equivalent to the liquid crystal capacitor for the other scanning lines. The pixel electrode row can compensate the miss capacitance from the storage capacitor and the liquid crystal capacitor for the last scanning line. As a result, the difference of capacitive effect for the edge scanning line and the other scanning lines can be balanced, so as to improve the displaying quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.