Voltage-controlled vertical bidirectional monolithic switch
US6580100B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
Abstract
A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode formed on the upper surface side and an anode formed on the lower surface side; and a second multiple-cell vertical IGBT transistor extending between a cathode formed on the lower surface side and an anode formed on the upper surface side, in which the cells of each transistor are arranged so that portions of the cells of a transistor are active upon operation of the other transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.