Monolithically integrated sensing device and method of manufacture
US6580139B1 · kind B1 · utility
0Cited by
27References
19Claims
0Family size
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Key dates
| Filing date | Sep 18, 2000 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Sep 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A monolithically integrated, compound semiconductor sensing device and a method of making the device is provided. The device includes an signal conditioning circuit formed on a substrate surface. A sensor including one or more compound semiconductors is deposited on a second portion of the substrate surface. The signal conditioning circuit has a well formed therein for exposing the substrate surface and the sensor is deposited within the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.