Method for manufacturing a low-profile semiconductor device
US6580168B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of forming a hardened photoresist layer on a bonding pad of a semiconductor chip, forming a conductive layer on the hardened photoresist layer to form a conductive bump on the bonding pad, forming a plurality of supporting pads on the semiconductor chip, attaching a chip-mounting substrate on the semiconductor chip such that the supporting pads interconnect the semiconductor chip and the substrate, and forming an insulating layer that fills a space between the semiconductor chip and the substrate and that encloses the conductive bump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.