Lithographic template and method of formation and use
US6580172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31507
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.