Magnetoresistive sensor or memory elements with decreased magnetic switch field
US6580270B1 · kind B1 · utility
11Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Dec 24, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sensor (MRE) or memory element (ME) having a free (1, 2, 3) and a pinned (Mp, 6) magnetic layer separated by a separation layer (5). The free layer comprises a sandwich structure comprising two magnetic layers (1,2), coupled anti-ferromagneticallly by a thin non-magnetic layer (3), the easy magnetization direction for the two magnetic layers being directed transversely to the longitudinal axis (1) of the stripe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.