High definition image sensor
US6580455B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1998 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | May 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/67
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved image sensing array including a semiconductive substrate having formed therein an array of discrete substrate areas organized in rows and columns. The array of areas is segmented into a plurality of blocks, each including a sub-array of the areas. At least one of the rows of each block has at least one reader cell formed therein, and the remaining rows of the block have photosensor cells formed in each area thereof. Each column of each block forms a column block including a plurality of photosensor cells, and a node line communicatively coupling each photosensor cell of the column block to an associated reader cell. A row address line is coupled to each photosensor cell in a particular row of the array. A column bit line is coupled to each reader cell in a particular column of the array. A block select line is coupled to each reader cell in a particular row of the array containing reader cells. In response to row select and block select inputs to the row address lines and the block select lines respectively, image data captured by each the photosensor cell is read out to a corresponding column-bit line through an associated reader cell for input to an output processing …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.