Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation

US6581669B2 · kind B2 · utility

Assignee

• W.C. Heraeus GmbH & Co. KG · DE

Inventors

• Martin Weigert · Lindlar, DE
• Uwe Konietzka · Rodenbach, DE

Key dates

• Filing date: Apr 10, 2001
• Grant date: Jun 24, 2003
• Expiry date: Apr 10, 2021

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B22D25/00
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si3N4 or SiO2 in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.