Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy
US6583033B2 · kind B2 · utility
4Cited by
30References
58Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A distributed Bragg reflector for a vertical cavity surface emitting laser has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Accurate control of the composition of the semiconductor material system must be maintained to result in a distributed Bragg reflector suitable for use in a VCSEL. A method of fabricating the distributed Bragg reflector includes calibrating the incorporation of at least one of the elements into the material system as different semiconductor materials are grown on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.