Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6583048B2 · kind B2 · utility
629Cited by
14References
56Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.