Method of forming a semiconductor device having a layer deposited by varying flow of reactants
US6583057B1 · kind B1 · utility
17Cited by
17References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1998 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device by placing a semiconductor substrate in a vacuum chamber and subjecting the semiconductor substrate (20) to a sub-atmospheric pressure, and depositing a layer (40) on the semiconductor substrate while maintaining the sub-atmospheric pressure. Deposition of the layer (40) is carried out by sequentially (i) flowing a first reactant into the vacuum chamber at a first flow rate, (ii) reducing flow of the first reactant into the vacuum chamber to a second flow rate, and (iii) increasing flow of the first reactant into the vacuum chamber to a third flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.