Image sensor
US6583398B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Jul 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor (39) comprises a plurality of pixels (10), each pixel comprising a light sensor element (12), wherein a sensor voltage across the element varying depending on the light incident on the element. First and second transistors (14,16) are connected in series between voltage supply lines (18,20). A gate voltage (Vg1) on the first transistor is dependent upon the sensor voltage so that the current flowing through the first transistor (14) is a function of the sensor voltage. The gate voltage (Vg2) of the second transistor is supplied by a feedback circuit (22,24,26) which provides that the current through the first and second transistors (14,16) is substantially equal. The output of the pixel (10) is the gate voltage (Vg2) of the second transistor (16). The image sensor design of the invention avoids the need for storage capacitors to provide pixel gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.