Method of inspecting pattern and inspecting instrument
US6583414B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Apr 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized. On the occasion of identifying the position to be reviewed on a sample and forming an image through irradiation of electron beam on the basis of the positional information of defect detected with the other inspection instrument, an electrical defect can be reviewed with the voltage contrast mode by designating the electron beam irradiation condition, detectors and detecting condition depending on a kind of defect to be reviewed. The image obtained is automatically classified in the image processing unit and the result is then additionally output to the defect file.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.