Light emitting diode and method of making the same
US6583443B1 · kind B1 · utility
35Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Jul 17, 2002 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.