Temperature-controlled semiconductor wafer chuck system
US6583638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1999 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station, the chuck having a top surface and a bottom surface and including a heat sink configured for removing thermal energy from the chuck, a primary heater configured to add heat to the chuck adjacent the top surface of the chuck and a secondary heater adjacent the bottom of the chuck, whereby the temperature of the top surface of the chuck and the bottom of the chuck can be independently controlled; and wherein the chuck can include a plurality of layers above the heat sink which are connected so as to accommodate differential expansion and contraction and thereby minimize distortion of the chuck due to thermal effects; and wherein the heat sink and associated layers integrally connected are configured to stiffen the chuck and resist deformation due to forces applied to the chuck by probe pins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.