High power laser
US6584134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/117
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to the invention, a high power diode pumped solid state laser is provided. The laser includes a first and second reflective surfaces which form an optical resonator cavity. A laser medium, particularly a Nd doped laser medium for example: a Nd:YAG, a Nd:YLF, or a Nd:YVO4 crystal is provided within the laser cavity. A fundamental frequency laser beam propagates from the front and back ends of the laser medium. The first reflective surface is highly reflective for fundamental beam. The second reflective surface is at least partially reflective for fundamental beam. The laser medium is end pumped by at least one diode pumping apparatus for example, a laser diode, or diode array, or fiber coupled laser diodes, whose wavelength matches at least one laser medium absorption band. The diode pumping apparatus is located adjacent either the front end or the back end of the laser medium, or both. The optical resonator cavity is configured to provide a laser beam diameter in the laser medium from about 0.8 mm to 2 mm in diameter for the fundamental beam. Desirably, the laser medium has a diameter of about 1.6 to 5 times the fundamental beam diameter in the laser medium. A cooling jac…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.