Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles
US6585826B2 · kind B2 · utility
2Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Dec 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing residual contamination including metal nitride particles from semiconductor wafer surfaces including the steps of: providing at least one semiconductor wafer with metal nitride particles adhering to the at least one semiconductor wafer surface thereto; subjecting the at least one semiconductor wafer to at least one mechanical brushing process while a cleaning solution including a carboxylic acid is supplied to at least one semiconductor wafer surface; and, subjecting the at least one semiconductor wafer to an a sonic cleaning process including the carboxylic acid cleaning solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.