Method for manufacturing a shield for an inductively-couple plasma apparatus
US6585907B2 · kind B2 · utility
0Cited by
4References
1Claims
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Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Nov 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.