N-type thiophene semiconductors
US6585914B2 · kind B2 · utility
55Cited by
7References
10Claims
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Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/164
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.