Lithography exposure device and lithography process

US6586169B2 · kind B2 · utility

Assignee

• DEUTSCHES ZENTRUM FÜR LUFT—UND RAUMFAHRT E.V. · DE

Inventors

• Uwe Brauch · Heitersheim, DE
• Hans Opower · Krailling, DE

Key dates

• Filing date: Jan 19, 2001
• Grant date: Jul 1, 2003
• Expiry date: Aug 4, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/704
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In order to create a lithography exposure device for producing structures extending in a surface area in a light-sensitive layer, with which a radiation field can be generated in the light-sensitive layer and with a control for controlling the intensity and position of the radiation field in such a manner that by means of a large number of successive exposure steps a plurality of conversion areas can be generated, in which the material of the light-sensitive layer is converted from an initial state into an end state and which together result in the structures, with which it is possible to produce, without masks, structures which have in at least one direction an extension which is smaller than that of one of the radiation fields used, it is suggested that with at least some of the exposure steps the control generate radiation fields with a distribution of energy which makes the action of at least two radiation fields on the same conversion area necessary in order to transfer the material of the light-sensitive layer in this area into the converted end state.