Method for fabricating thin film transistor including crystalline silicon active layer

US6586287B2 · kind B2 · utility

Assignee

• Seung-Ki Joo · KR

Inventors

• Seung Ki Joo · Seoul, KR
• Seok-Woon Lee · Tainan, TW

Key dates

• Filing date: Apr 1, 2002
• Grant date: Jul 1, 2003
• Expiry date: Apr 1, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6715

Abstract

The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.