High resistivity film for 4T SRAM
US6586310B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1999 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/15
Abstract
The present invention provides a method of manufacturing a resistor for use in a memory element and a semiconductor device employing the resistor. The method of manufacturing may comprise forming a dielectric layer over an active region of a semiconductor wafer and forming a resistive layer on the dielectric layer. The resistive layer comprises a compound wherein a first element of the compound is a Group III or Group IV element and a second element of the compound is a Group IV or Group V element. The method further comprises connecting an electrical interconnect structure to the resistive layer that electrically connects the resistive layer to the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.