Method to metallize ohmic electrodes to P-type group III nitrides
US6586328B1 · kind B1 · utility
6Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Jun 5, 2000 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jun 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination or oxides. A high work function metal is then formed on the oxide-forming layer. An anneal is conducted to diffuse the high work function on metal through the oxide-forming layer. One or more metal cap layers may top the high work function metal to protect the high work function metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.