Nitride semiconductor device with improved lifetime and high output power
US6586762B2 · kind B2 · utility
272Cited by
15References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 5, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jul 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a n-type nitride semiconductor layer 11 and an p-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.