Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same

US6586781B2 · kind B2 · utility

Assignees

• CREE LIGHTING COMPANY · US
• The Regents of the University of California · US

Inventors

• Yifeng Wu · Goleta, US
• Naiqing Zhang · Qingdao, CN
• Jian Xu · Nanhu, CN
• Lee Mc Carthy · Chapel Hill, US

Key dates

• Filing date: Jan 29, 2001
• Grant date: Jul 1, 2003
• Expiry date: May 19, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

New Group III nitride based field effect transistors and high electron mobility transistors are disclosed that provide enhanced high frequency response characteristics. The preferred transistors are made from GaN/AlGaN and have a dielectric layer on the surface of their conductive channels. The dielectric layer has a high percentage of donor electrons that neutralize traps in the conductive channel such that the traps cannot slow the high frequency response of the transistors. A new method of manufacturing the transistors is also disclosed, with the new method using sputtering to deposit the dielectric layer.