Transistor insulator layer incorporating superfine ceramic particles
US6586791B1 · kind B1 · utility
39Cited by
11References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 19, 2000 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.